q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f 1.gate 2. drain 3. source 2 1 2 3 1 3 d-pak i-pak HFD1N60F hfu1n60f * when mounted on the minimum pad size recommended (pcb mount) features absolute maximum ratings t c =25 e unless otherwise specified HFD1N60F / hfu1n60f 600v n-channel mosfet sep 2015 thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 4.53 e /w r ja junction-to-ambient* -- 50 r ja junction-to-ambient -- 110 symbol parameter value units v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 1.0 a drain current ? continuous (t c = 100 e ) 0.6 a i dm drain current ? pulsed (note 1) 4.0 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 33 mj i ar avalanche current (note 1) 1.0 a e ar repetitive avalanche energy (note 1) 2.8 mj p d power dissipation (t a = 25 e )* 2.5 w power dissipation (t c = 25 e ) - derate above 25 e 28 w 0.22 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e bv dss = 600 v r ds(on) typ
i d = 1 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 3.7 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 1.0 a i sm pulsed source-drain diode forward current -- -- 4.0 v sd source-drain diode forward voltage i s = 1.0 a, v gs = 0 v -- -- 1.3 v trr reverse recovery time i s = 1.0 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 181 -- qrr reverse recovery charge -- 0.5 -- & on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 3 v ds = 480 v, t c = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 160 -- ? c oss output capacitance -- 26 -- ? c rss reverse transfer capacitance -- 6.5 -- ? dynamic characteristics t d(on) turn-on time v ds = 300 v, i d = 1.0 a, r g = 25 ? (note 4,5) -- 13 -- t r turn-on rise time -- 17 -- t d(off) turn-off delay time -- 19 -- t f turn-off fall time -- 22 -- q g total gate charge v ds = 480 v, i d = 1.0 a, v gs = 10 v (note 4,5) -- 3.7 -- nc q gs gate-source charge -- 0.9 -- nc q gd gate-drain charge -- 1.3 -- nc switching characteristics source-drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 0.5 a -- 6.5 8 ? notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=59mh, i as =1.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f i dr , reverse drain current [a] v sd , source-drain voltage [v] typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 01234 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] * note : i d = 1.0a v ds = 300v v ds = 120v v ds = 480v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 i d , drain current[a] r ds(on) [ : ], drain-source on-resistance v gs = 10v v gs = 20v * note : t j = 25 o c i d , drain current [a] v ds , drain-source voltage [v] i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 0 50 100 150 200 250 300 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve typical characteristics (continued) 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 0.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 4.53 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] t 2 t 1 p dm
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f package dimension 5.35 0.15 6.6 0.2 5.6 0.2 0.6 0.2 0.8 0.2 2.3typ 2.3typ 2.7 0.3 9.7 +0.5 -0.3 0.05 +0.1 -0.05 0.5 +0.1 -0.05 0.5 0.05 2.3 0.1 1.2 0.3 1.2 0.3 1 0.2 k t w h r g o { v t y \ y p g
q?v~zy??q?v?_ra]???qcabfq HFD1N60F_hfu1n60f package dimension 5.35 0.15 6.6 0.2 0.75 0.15 2.3typ 2.3typ 5.6 0.2 7 0.2 7.5 0.3 0.6 0.1 2.3 0.1 0.5 0.05 1.2 0.3 0.5 +0.1 -0.05 0.8 0.15 p t w h r g o { v t y \ x p g ^ u _ w u [ g
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